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Issue DateTitleAuthor(s)
1-Feb-1995CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYERYEH, CF; YANG, TZ; CHEN, TJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1993EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORSYEH, CF; YANG, TZ; CHEN, CL; CHEN, TJ; YANG, YC; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1994LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDEYEH, CF; CHEN, CL; YANG, YC; LIN, SS; YANG, TZ; HONG, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1994PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATORYEH, CF; LIN, SS; YANG, TZ; CHEN, CL; YANG, YC; 電控工程研究所; Institute of Electrical and Control Engineering
Showing results 1 to 4 of 4