| Issue Date | Title | Author(s) |
| 20-Aug-1990 | CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-May-1990 | CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES | WANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Mar-1994 | GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Sep-1989 | GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-May-1990 | INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY | WANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Dec-1990 | MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR | YARN, KF; CHANG, CY; WANG, YH; WANG, RL; 電控工程研究所; Institute of Electrical and Control Engineering |
| 20-Dec-1989 | A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY | WANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Nov-1994 | A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Jun-1990 | A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 20-三月-1989 | NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-六月-1990 | ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY | YARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-二月-1990 | A TRISTATE SWITCH USING TRIANGULAR BARRIERS | WANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-六月-1990 | VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE | YARN, KF; WANG, YH; CHANG, CY; CHANG, CS; 電控工程研究所; Institute of Electrical and Control Engineering |
