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Issue DateTitleAuthor(s)
1979BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTUREYU, GJ; TSAI, C; YU, SY; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1979CHARACTERISTIC STUDIES OF VMOS AND UMOSPENG, KL; YU, SY; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1977NEW V-GROOVE INTEGRATED INJECTION LOGICYU, SY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1980OBSERVATION OF A POSSIBLE FRINGING FIELD-EFFECT ON THE THRESHOLD VOLTAGE VARIATION OF THE SHORT-CHANNEL MOSFETCHANG, HL; YU, SY; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1981THE SELF-CONSISTENT ANALYSIS OF THE ON-SET OF STRONG INVERSION IN AN MOS-TRANSISTOR WITH DOUBLE-LAYER SUBSTRATE IMPURITY PROFILEYU, SY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1979SIMPLIFIED APPROACH TO THE CURRENT-VOLTAGE CHARACTERISTICS OF THE P+NP+ DIODE BELOW REACH-THROUGHYU, SY; THOMAS, G; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 6 of 6