Browsing by Author Yamaguchi, H.
Showing results 1 to 2 of 2
| Issue Date | Title | Author(s) |
| 1-Oct-2006 | Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006) | Lin, Y. C.; Chang, Edward Yi; Yamaguchi, H.; Hirayama, Y.; Chang, X. Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr |
| 8-Jan-2007 | Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications | Lin, Y. C.; Yamaguchi, H.; Chang, E. Y.; Hsieh, Y. C.; Ueki, M.; Hirayama, Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
