瀏覽 的方式： 作者 Yang, KN
顯示 1 到 5 筆資料，總共 5 筆
| 公開日期 | 標題 | 作者 |
| 1-四月-1998 | Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's | Chen, MJ; Huang, HT; Hou, CS; Yang, KN; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-2001 | Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs | Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2000 | Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs | Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十二月-2001 | Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs | Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2000 | A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides | Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
