| 公開日期 | 標題 | 作者 |
| 1-一月-2001 | Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes | Yang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL; 機械工程學系; Department of Mechanical Engineering |
| 1-三月-2006 | Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics | Lee, YJ; Ho, PT; Yang, WL; Chao, TS; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2001 | High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices | Yang, WL; Chao, TS; Cheng, CM; Pan, TM; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-2001 | High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment | Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-六月-2000 | Improvement of polysilicon oxide integrity using NF3-annealing | Yang, WL; Shieh, MS; Chen, YM; Chao, TS; Liu, DG; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2002 | Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier | Yang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP; 機械工程學系; 電子物理學系; Department of Mechanical Engineering; Department of Electrophysics |
| 1-十一月-1996 | Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors | Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1996 | Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors | Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-2004 | Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning | Chao, TS; Lin, YH; Yang, WL; 電子物理學系; Department of Electrophysics |
| 2004 | NBTI effects of pMOSFETs with different nitrogen dose imlantation | Lee, YJ; Tang, LC; Wu, MH; Chao, TS; Ho, PT; Lai, D; Yang, WL; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2000 | Novel cleaning solutions for polysilicon film post chemical mechanical polishing | Pan, TM; Lei, TF; Chen, CC; Chao, TS; Liaw, MC; Yang, WL; Tsai, MS; Lu, CP; Chang, WH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2006 | Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatment | Chao, TS; Lin, YH; Yang, WL; 電子物理學系; Department of Electrophysics |
| 1-五月-2000 | Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon | Yang, WL; Cheng, CY; Tsai, MS; Liu, DG; Shieh, MS; 交大名義發表; National Chiao Tung University |
| 1-七月-2003 | Stability investigation of single-wafer process by using a spin etcher | Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 19-六月-1997 | Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure | Yang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2004 | Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides | Yang, WL; Chao, TS; Lai, KH; 電子物理學系; Department of Electrophysics |
