瀏覽 的方式： 作者 Yano, Masaru
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 1-八月-2019 | The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories | Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro; 電機工程學系; Department of Electrical and Computer Engineering |
| 1-七月-2016 | Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash | Chiu, Yung-Yueh; Aoki, Minoru; Yano, Masaru; Shirota, Riichiro; 電機工程學系; 電信工程研究所; Department of Electrical and Computer Engineering; Institute of Communications Engineering |
| 1-三月-2019 | Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation | Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro; 交大名義發表; 電信工程研究所; National Chiao Tung University; Institute of Communications Engineering |
