| Issue Date | Title | Author(s) |
| 15-May-2006 | Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy | Huang, GS; Yao, HH; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 19-Jan-2004 | Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes | Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 6-Feb-2006 | Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition | Huang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics |
| 22-Aug-2005 | Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector | Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF; 光電工程學系; Department of Photonics |
| 1-Mar-2005 | High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength | Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics |
| 1-May-2005 | Influence of dislocation density on photoluminescence intensity of GaN | Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC; 光電工程學系; Department of Photonics |
| 28-Mar-2006 | InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption | Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Mar-2006 | The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors | Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF; 光電工程學系; Department of Photonics |
| 2003 | MOCVD growth of AlN/GaN DBR structure under various ambient conditions | Yao, HH; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics |
| 15-Feb-2004 | MOCVD growth of AlN/GaN DBR structures under various ambient conditions | Yao, HH; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 10-Dec-2004 | MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission | Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics |
| 2005 | An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors | Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Apr-2006 | Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off | Chu, JT; Lu, TC; Yao, HH; Kao, CC; Liang, WD; Tsai, JY; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
