瀏覽 的方式： 作者 Yao, J. N.
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 2016 | Optimization of gate insulator material for GaN MIS-HEMT | Lin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology |
| 1-一月-2019 | Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application | Wang, C.; Lin, Y. C.; Kuo, C. N.; Lee, M. W.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Chang, Edward Y.; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology |
| 1-一月-2019 | Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs | Lin, Y. C.; Lee, M. W.; Tsai, M. Y.; Wang, C.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Maa, J. S.; Chang, Edward Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology |
