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Issue DateTitleAuthor(s)
1-Sep-2005Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Nov-2004Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistorsWu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 3 of 3