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Issue DateTitleAuthor(s)
2001Barrier characteristics of PECVD alpha-SiC : H dielectricsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS; 電子物理學系; Department of Electrophysics
1-Jan-1997Changes of longitudinal vortex roll structure in a mixed convective air flow through a horizontal plane channel: An experimental studyChang, MY; Yu, CH; Lin, TF; 機械工程學系; Department of Mechanical Engineering
2001Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-May-1997Effects of aspect ratio on vortex flow patterns in mixed convection of air through a bottom-heated horizontal rectangular ductYu, CH; Lin, TF; 機械工程學系; Department of Mechanical Engineering
2000Electrical reliability issues of integrating low-K dielectrics with Cu metallizationWu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004Enhancing the overwriting characteristics of phase-change optical disks by doping in dielectric layersYu, CH; Hsieh, TE; Yeh, TT; Shieh, HPD; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Jul-2005Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structureYeh, PH; Wu, HH; Yu, CH; Chen, LJ; Liu, PT; Hsu, CH; Chang, TC; 光電工程學系; Department of Photonics
1-May-1997Flow visualization and numerical simulation of transverse and mixed vortex roll formation in mixed convection of air in a horizontal flat ductChang, MY; Yu, CH; Lin, TF; 機械工程學系; Department of Mechanical Engineering
1-Aug-1997Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition processLin, YM; Jang, SM; Yu, CH; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1997Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition processLin, YM; Jang, SM; Yu, CH; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2004Intelligent leaky bucket algorithms for sustainable-cell-rate usage parameter control in ATM networksChang, CJ; Yu, CH; Chang, CS; Lin, LF; 電信工程研究所; Institute of Communications Engineering
1-Jun-2001Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectricWu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2004Numerical performance and throughput benchmark for electronic structure calculations in PC-Linux systems with new architectures, updated compilers, and librariesYu, JSK; Hwang, JK; Tang, CY; Yu, CH; 生物科技學系; Department of Biological Science and Technology
28-Feb-2005Photochemistry and photodissociation of benzosultine and naphthosultine: electronic relaxation of sultines and kinetics and theoretical studies of fragment o-quinodimethanesTang, KC; Lee, SJ; Chi, SH; Lu, KL; Chen, WC; Yu, CH; Chen, IC; Wu, SL; Chen, CC; Liu, WD; Chen, LJ; Wang, NS; Chung, WS; 應用化學系; Department of Applied Chemistry
1-Jul-2003Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H filmsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2003Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contentsChiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2002A physical model for the hysteresis phenomenon of the ultrathin ZrO2 filmWang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 30  next >