瀏覽 的方式： 作者 Yu, Ming H.
顯示 1 到 6 筆資料，總共 6 筆
| 公開日期 | 標題 | 作者 |
| 2010 | A New Charge-Trap-Engineered Memory Device with Silicon-Oxide-Nitride-Vacuum-Silicon (SONVAS) Structure for LTPS-TFT-Based Applications | Liao, Ta-Chuan; Wu, Chun-Yu; Chen, Sheng-Kai; Yu, Ming H.; Kang, Tsung-Kuei; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-2011 | Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN-Alumina-Nitride-Vacuum-Silicon Structure | Wu, Chun-Yu; Liu, Yen-Ting; Liao, Ta-Chuan; Yu, Ming H.; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-2008 | Novel gate-all-around poly-Si TFTs with multiple nanowire channels | Liao, Ta-Chuan; Tu, Shih-Wei; Yu, Ming H.; Lin, Wei-Kai; Liu, Cheng-Chin; Chang, Kuo-Jui; Tai, Ya-Hsiang; Cheng, Huang-Chung; 電子工程學系及電子研究所; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Display |
| 2009 | A Novel LTPS-TFT-Based Charge-Trapping Memory Device with Field-Enhanced Nanowire Structure | Liao, Ta-Chuan; Chen, Sheng-Kai; Yu, Ming H.; Wu, Chun-Yu; Kang, Tsung-Kuei; Chien, Feng-Tso; Liu, Yen-Ting; Lin, Chia-Min; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2012 | A Novel Polysilicon Field-Enhanced Nanowire Thin-Film Transistor with the TiN-Hafnia-Nitride-Vacuum-Silicon (THNVAS) Structure for Nonvolatile Memory Applications | Wu, Chun-Yu; Liao, Ta-Chuan; Liu, Yen-Ting; Yu, Ming H.; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2006 | Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond | Yu, Ming H.; Li, J. H.; Lin, H. H.; Chen, C. H.; Ku, K. C.; Nieh, C. F.; Hisa, H.; Sheu, Y. M.; Tsai, C. W.; Wang, Y. L.; Chu, H. Y.; Cheng, H. C.; Lee, T. L.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
