瀏覽 的方式： 作者 Yu, SM
顯示 1 到 7 筆資料，總共 7 筆
| 公開日期 | 標題 | 作者 |
| 2005 | Computer simulation of germanium nanowire field effect transistors | Li, YM; Chou, HM; Lee, BS; Lu, CS; Yu, SM; 電信工程研究所; Institute of Communications Engineering |
| 1-七月-2005 | A numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures | Li, YM; Yu, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 1-三月-2005 | A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation | Li, YM; Yu, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 1-四月-2005 | Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current | Li, YM; Yu, SM; Lee, JW; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 2004 | Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs | Tang, CS; Yu, SM; Chou, HM; Lee, JW; Li, YM; 交大名義發表; National Chiao Tung University |
| 1-七月-2004 | A two-dimensional quantum transport simulation of nanoscale double-gate MOSFETs using parallel adaptive technique | Li, YM; Yu, SM; 奈米中心; 友訊交大聯合研發中心; Nano Facility Center; D Link NCTU Joint Res Ctr |
| 1-八月-2004 | A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions | Li, YM; Yu, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
