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Browsing by Author Zakharova, A

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
15-Mar-2005Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructuresZakharova, A; Yen, ST; Nilsson, K; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Dec-2001Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2004Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-Jul-2004A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fieldsLapushkin, I; Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2005Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic fieldZakharova, A; Nilsson, K; Chao, KA; Yen, ST; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2006Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc currentZakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Aug-2002Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7