瀏覽 的方式： 作者 Zhan, Runze
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 1-十二月-2013 | Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors | Zhan, Runze; Dong, Chengyuan; Liu, Po-Tsun; Shieh, Han-Ping D.; 光電工程學系; Department of Photonics |
| 1-九月-2013 | Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers | Zhan, Runze; Dong, Chengyuan; Yang, Bo-Ru; Shieh, Han-Ping D.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display |
| 十一月-2016 | Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions | Li, GongTan; Zhan, Runze; Yang, Bo-Ru; Liu, Chuan; Dong, ChengYuan; Lee, Chia-Yu; Wu, Yuan-Chun; Lu, Po-Yen; Deng, ShaoZhi; Shieh, Han-Ping D.; Xu, NingSheng; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display |
