氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究

Title:	氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究 Epitaxy and Characterization of InGaN and GaAsN Alloys
Authors:	陳衛國 WEI-KUOCHEN 交通大學電子物理系
Keywords:	同價位元素雜質摻雜;氮砷化鎵;磊晶熱力學;有機金屬氣相磊晶;異質界面結構;Isoelectronic doping;GaAsN;Thermodynamics growth model
Issue Date:	2000
Gov't Doc #:	NSC89-2112-M009-012
URI:	http://hdl.handle.net/11536/100638 https://www.grb.gov.tw/search/planDetail?id=523763&docId=95131
Appears in Collections:	Research Plans

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