| Title: | GaN光電及微波元件之研製---子計畫III：氮化鎵場效電晶體之研製 (I) The Study of GaN-Based Field Effect Transistor (I) |
| Authors: | 張守進 CHANG SHOOU-JINN 交通大學光電工程研究所 |
| Keywords: | 氮化鎵;場效電晶體;光電元件;微波元件;GaN;Field effect transistor;Optoelectronic device;Microwave device |
| Issue Date: | 2000 |
| Gov't Doc #: | NSC89-2215-E009-018 |
| URI: | http://hdl.handle.net/11536/101337 https://www.grb.gov.tw/search/planDetail?id=542521&docId=99694 |
| Appears in Collections: | Research Plans |
