Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

Title:	Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers
Authors:	Yang, Hung-Pin D. Hsu, I-Chen Lai, Fang-I Lin, Gray Hsiao, Ru-Shang Maleev, Nikolai A. Blokhin, Sergej A. Kuo, Hao-Chung Chi, Jim Yung 光電工程學系 Department of Photonics
Keywords:	broad-area;submonolayer;quantum-dot;VCSEL
Issue Date:	1-Oct-2007
Abstract:	A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.
URI:	http://dx.doi.org/10.1143/JJAP.46.6670 http://hdl.handle.net/11536/10259
ISSN:	0021-4922
DOI:	10.1143/JJAP.46.6670
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume:	46
Issue:	10A
Begin Page:	6670
End Page:	6672
Appears in Collections:	Articles

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