Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 王朝勳 | en_US |
| dc.contributor.author | 郭浩中 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:48Z | - |
| dc.date.available | 2014-12-16T06:11:48Z | - |
| dc.date.issued | 2013-09-16 | en_US |
| dc.identifier.govdoc | H01L033/04 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103205 | - |
| dc.description.abstract | 一種具有漸變含量之電洞穿隧層之發光元件,包含:基板;n-型半導體層,設置在基板上,n-型半導體層具有第一部份及第二部份;具有漸變含量之電洞穿隧層,設置在n-型半導體層之第一部份上;電子阻擋層,設置在具有漸變含量之電洞穿隧層上;p-型半導體層,設置在電子阻擋層上;第一電極,設置在p-型半導體層上;以及第二電極,設置在n-型半導體層之第二部份上且與n-型導體層之第一部份上之結構電性分離,且第二電極與第一電極之電性相反,藉由具有漸變含量之電洞穿隧層做為多重量子井層,在寬能隙發光元件中,提高電洞傳遞效率,進一步的提高發光效率。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具有漸變含量之電洞穿隧層之發光元件 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201338197 | zh_TW |
| Appears in Collections: | Patents | |
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