光電晶體

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DC Field	Value	Language
dc.contributor.author	冉曉雯	en_US
dc.contributor.author	孟心飛	en_US
dc.contributor.author	蔡娟娟	en_US
dc.contributor.author	陳蔚宗	en_US
dc.contributor.author	趙宇強	en_US
dc.date.accessioned	2014-12-16T06:12:12Z	-
dc.date.available	2014-12-16T06:12:12Z	-
dc.date.issued	2012-02-01	en_US
dc.identifier.govdoc	H01L031/113	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/103502	-
dc.description.abstract	本發明係揭露一種光電晶體，該光電晶體包含有一基板、一閘極層、一介電層、一主動層、一源極及一汲極及一光吸收層。閘極層係設於基板上，而介電層則設於閘極層上。主動層係具有一第一能隙並設於介電層上，而源極及汲極則係設於主動層上。其中，光吸收層係具有一第二能隙並覆蓋主動層、源極及汲極，且第二能隙小於第一能隙。	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	光電晶體	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	TWN	zh_TW
dc.citation.patentnumber	201205846	zh_TW
Appears in Collections:	Patents

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