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DC Field | Value | Language |
---|---|---|
dc.contributor.author | 許鉦宗 | en_US |
dc.contributor.author | 陳振嘉 | en_US |
dc.date.accessioned | 2014-12-16T06:12:32Z | - |
dc.date.available | 2014-12-16T06:12:32Z | - |
dc.date.issued | 2011-01-01 | en_US |
dc.identifier.govdoc | G01N033/50 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/103661 | - |
dc.description.abstract | 本發明係揭露一種結合矽奈米線閘極二極體之感測元件、製造方法及其檢測系統。此感測元件包含一矽奈米線閘極二極體、一頓化層以及一微流道。頓化層包覆此矽奈米線蕭特基二極體且具有一經修飾之表面,微流道與頓化層接合。當一待測樣品透過該微流道接觸此經修飾之表面時,矽奈米線閘極二極體係相對應地產生一電性訊號,如電流值、電阻值或電導值變化,藉此此電性訊號之變化以檢測待測樣品之存在。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 結合矽奈米線閘極二極體之感測元件、製造方法及其檢測系統 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | 201100796 | zh_TW |
Appears in Collections: | Patents |
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