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dc.contributor.author陳三元en_US
dc.contributor.author蕭繼聖en_US
dc.date.accessioned2014-12-16T06:13:07Z-
dc.date.available2014-12-16T06:13:07Z-
dc.date.issued2008-01-01en_US
dc.identifier.govdocC30B029/16zh_TW
dc.identifier.govdocC30B029/60zh_TW
dc.identifier.govdocH01L021/208zh_TW
dc.identifier.govdocH01L021/368zh_TW
dc.identifier.govdocH01L033/00zh_TW
dc.identifier.govdocC09K011/54zh_TW
dc.identifier.govdocC09K011/64zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104028-
dc.description.abstract本發明主要揭示了在一種高度陣列式排列的氧化鋁-氧化鋅複合奈米線的製備方法,其步驟至少包括:在鍍有氧化鋅薄膜的矽基板上,經由一種簡單的化學溶液法,在低溫(60-95�C)成長氧化鋅奈米線(或奈米柱),再經過浸入A1離子解膠水溶液,最後再置入氣氛爐中做快速熱處理退火。如此可得到具有單晶的wurtzite結構的氧化鋅奈米線陣列,由SEM分析可以得知,此複合奈米線直徑約為20-100nm。zh_TW
dc.language.isozh_TWen_US
dc.title高度陣列式排列的氧化鋁-氧化鋅複合奈米線的製備方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200801263zh_TW
Appears in Collections:Patents


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