Title: | 以半導體量子點加強螢光效率之高分子發光二極體 |
Authors: | 韋光華 周嘉宏 |
Issue Date: | 16-Jul-2007 |
Abstract: | 本發明為提供可製成高分子發光二極體之奈米複材,而奈米複材是導入具表面改質之硫化鎘(量子點)於樹枝狀聚茀發光高分子而形成,並可有效地提升螢光發光效率及電激光效率,製成發光二極體元件後亦能增加元件之穩定性及電性。 |
Gov't Doc #: | C09K011/06 H05B033/14 |
URI: | http://hdl.handle.net/11536/104072 |
Patent Country: | TWN |
Patent Number: | 200726822 |
Appears in Collections: | Patents |
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