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dc.contributor.author呂宗熙en_US
dc.contributor.author蘇侯舉en_US
dc.date.accessioned2014-12-16T06:13:33Z-
dc.date.available2014-12-16T06:13:33Z-
dc.date.issued2005-12-16en_US
dc.identifier.govdocH01F041/04zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104221-
dc.description.abstract本發明係提供一種薄膜式電磁線圈之製作方法,係利用原子力顯微鏡進行微影(Force Lithography)加工,製造具有奈米等級的電磁線圈,進而提高其磁場強度;其係利用原子力微影顯微技術於一薄膜基材上進行加工,使其呈現凹陷結構,再經由一微機電製程,形成一具有奈米等級、高磁場強度的薄膜式電磁線圈,以達到降低成本、提升電磁線圈效率之功能。zh_TW
dc.language.isozh_TWen_US
dc.title薄膜式電磁線圈之製作方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200540887zh_TW
Appears in Collections:Patents


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