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dc.contributor.authorWu, W. C.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorHuang, C. H.en_US
dc.contributor.authorHsu, L. H.en_US
dc.contributor.authorStarski, J. P.en_US
dc.contributor.authorZirath, H.en_US
dc.date.accessioned2014-12-08T15:13:31Z-
dc.date.available2014-12-08T15:13:31Z-
dc.date.issued2007-08-16en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20071696en_US
dc.identifier.urihttp://hdl.handle.net/11536/10439-
dc.description.abstractA novel coaxial transition for CPW-to-CPW flip chip interconnect is presented and experimentally demonstrated. To realise the coaxial transition on the CPW circuit, benzocyclobutene was used as the interlayer dielectric between the vertical coaxial transition and the CPW circuit. The coaxial interconnect structure was successfully fabricated and RF characterised to 67 GHz. The structure showed excellent interconnect performance from DC up to 55 GHz with low return loss below 20 dB and low insertion loss less than 0.5 dB even when the underfill was applied to the structure.en_US
dc.language.isoen_USen_US
dc.titleCoaxial transitions for CPW-to-CPW flip chip interconnectsen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20071696en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume43en_US
dc.citation.issue17en_US
dc.citation.spage929en_US
dc.citation.epage930en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000249282200016-
dc.citation.woscount1-
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