Title: Structure of high power edge emission laser diode
Authors: Lu
Tien-Chang
Chen
Chyong-Hua
Issue Date: 18-Aug-2009
Abstract: A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.
Gov't Doc #: H01S005/00
H01S003/04
URI: http://hdl.handle.net/11536/104744
Patent Country: USA
Patent Number: 07577175
Appears in Collections:Patents


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