Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, S. J. | en_US |
dc.contributor.author | Wu, K. Y. | en_US |
dc.contributor.author | Yang, Y. H. | en_US |
dc.contributor.author | Hwang, J. | en_US |
dc.contributor.author | Wu, Hsin-Ying | en_US |
dc.contributor.author | Pan, Ru-Pin | en_US |
dc.contributor.author | Lee, A. P. | en_US |
dc.contributor.author | Kou, C. S. | en_US |
dc.date.accessioned | 2014-12-08T15:13:38Z | - |
dc.date.available | 2014-12-08T15:13:38Z | - |
dc.date.issued | 2007-07-31 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2007.04.039 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10534 | - |
dc.description.abstract | A plasma ion immersion treatment has been developed to enhance the liquid crystal (LC) alignment on the hydrogenated amorphous carbon (a-C:H) layer in an inductively coupled plasma (ICP) chamber. No LC alignment was observed for the a-C:H layer tilted at an angle of 0 degrees during the bombardment with plasma ions. The LC alignment occurs for the a-C:H layer tilted at an angle of 30 degrees or 60 degrees. Their pretilt angles (similar to 1.4 degrees) are approximately the same. The azimuthal anchoring strength is 1.98 x 10(-6) J/m(2) at a tilted angle of 30 degrees and 1.14 x 10(-4) J/m(2) at a tilted angle of 60 degrees. The mechanism for the LC alignment is attributed to the oblique incidence of ions within the matrix sheath of non-uniform thickness near the a-C: H surface under a negative pulse bias. The matrix sheath of non-uniform thickness is confirmed by the plasma density distribution in the ICP chamber and the X-ray photoemission spectra across the a-C:H layer. (C) 2007 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | liquid crystal alignment | en_US |
dc.subject | amorphous carbon | en_US |
dc.subject | plasma ion | en_US |
dc.subject | x-ray photoemission | en_US |
dc.title | Liquid crystal alignment on the a-C : H films by Ar plasma ion immersion | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.tsf.2007.04.039 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 515 | en_US |
dc.citation.issue | 20-21 | en_US |
dc.citation.spage | 8000 | en_US |
dc.citation.epage | 8004 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000249308400044 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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