1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorSun, Chia-Liangen_US
dc.date.accessioned2014-12-16T06:16:20Z-
dc.date.available2014-12-16T06:16:20Z-
dc.date.issued2003-12-04en_US
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105785-
dc.description.abstractThe present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.zh_TW
dc.language.isozh_TWen_US
dc.titleFerroelectric thin film processing for ferroelectric field-effect transistorzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20030224537zh_TW
Appears in Collections:Patents


Files in This Item:

  1. 20030224537.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...