| Title: | Fabrication and characterization of poly-Si nanowire devices with performance enhancement techniques |
| Authors: | Su, Chun-Jung Lin, Homg-Chih Tsai, Hsien-Hung Huang, Tiao-Yuan Ni, Wei-Xin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 2007 |
| URI: | http://hdl.handle.net/11536/12334 |
| ISBN: | 978-1-4244-0584-8 |
| Journal: | 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers |
| Begin Page: | 120 |
| End Page: | 121 |
| Appears in Collections: | Conferences Paper |
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- Performance Enhancement in Double-Gated Poly-Si Nanowire Transistors With Reduced Nanowire Channel Thickness / Lin, Horng-Chih;Chen, Wei-Chen;Lin, Chuan-Ding;Huang, Tiao-Yuan
- Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations / Hsu, Hsing-Hui;Liu, Ta-Wei;Chan, Leng;Lin, Chuan-Ding;Huang, Tiao-Yuan
- 高敏感度之矽鍺奈米生醫感測之研究與應用 / 郭俊銘;Jiun-Ming Kuo;張國明;Kow-Ming Chang
- Novel Method for Fabrication of Tri-Gated Poly-Si Nanowire Field-Effect Transistors With Sublithographic Channel Dimensions / Lee, Ko-Hui;Lin, Horng-Chih;Huang, Tiao-Yuan
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