Title: Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals
Authors: Li, Hsiang-Wei
Yin, Yu-Feng
Chang, Chen-Yu
Tsai, Chen-Hung
Hsu, Yen-Hsiang
Lin, Da-Wei
Wu, Yuh-Renn
Kuo, Hao-Chung
Huang, Jian Jang
光電工程學系
Department of Photonics
Keywords: Light-emitting diodes;non-polar GaN;photonic crystal;purcell effect
Issue Date: 1-Dec-2014
Abstract: The unique properties of nonpolar GaN light-emitting diodes (LEDs) have the advantages of generating polarized light emission. The employment of asymmetric 2-D photonic crystals (PhCs) can further enhance the light polarization ratio. In addition, it was generally recognized that the Purcell effect can increase the internal quantum efficiency of the LEDs with PhCs. In this paper, we study the properties of optical modes from different crystal planes. The Purcell effect is analyzed based on the PhCs and material crystal orientations. With different transition probability of the polarized photons in valence bands, the corresponding Purcell effect enhancement on the quantum efficiency varies.
URI: http://dx.doi.org/10.1109/JQE.2014.2362552
http://hdl.handle.net/11536/123885
ISSN: 0018-9197
DOI: 10.1109/JQE.2014.2362552
Journal: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 50
Issue: 12
Begin Page: 951
End Page: 956
Appears in Collections:Articles


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