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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorTasi, Cheng-Hsunen_US
dc.contributor.authorHuang, Shiau-Yuanen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.date.accessioned2015-07-21T08:28:56Z-
dc.date.available2015-07-21T08:28:56Z-
dc.date.issued2015-02-15en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2014.10.133en_US
dc.identifier.urihttp://hdl.handle.net/11536/124024-
dc.description.abstractThe structural, surface morphological and nanomechanical characteristics of Bi2Te3 thin films are investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and nanoindentation techniques. The Bi2Te3 thin films are deposited on c-plane sapphire substrates using pulsed laser deposition (PLD). The XRD result showed that Bi2Te3 thin film had a c-axis preferred orientation and a smoother surface feature from AFM observation. Nanoindentation results exhibit the discontinuities (so-called multiple "pop-ins" event) in the loading segments of the load-displacement curves, indicative of the deformation behavior in the hexagonal-structured Bi2Te3 thin film is the nucleation and propagation of dislocations. Based on this scenario, an energetic estimation of nanoindentation-induced dislocation resulted from pop-in effects is made. Furthermore, the hardness and Young\'s modulus of Bi2Te3 thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) mode. The obtained values of the hardness and Young\'s modulus are 5.7 +/- 0.8 GPa and 158.6 +/- 6.2 GPa, respectively. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBi2Te3 thin filmsen_US
dc.subjectPLDen_US
dc.subjectPop-inen_US
dc.subjectNanoindentationen_US
dc.subjectHardnessen_US
dc.titleNanoindentation pop-in effects of Bi2Te3 thermoelectric thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2014.10.133en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume622en_US
dc.citation.spage601en_US
dc.citation.epage605en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000345749500090en_US
dc.citation.woscount2en_US
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