Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs

Title:	Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs
Authors:	Chang, TS Chang, TC Liu, PT Chang, TS Yeh, FS 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
Keywords:	TFT;low-k;passivation
Issue Date:	1-Mar-2006
Abstract:	In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k similar to 7), the HSQ passivation layer (k similar to 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2005 Published by Elsevier B.V.
URI:	http://dx.doi.org/10.1016/j.tsf.2005.07.068 http://hdl.handle.net/11536/12547
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2005.07.068
Journal:	THIN SOLID FILMS
Volume:	498
Issue:	1-2
Begin Page:	70
End Page:	74
Appears in Collections:	Conferences Paper

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