Title: | Enabling High-Injection Current Light-Emitting Diodes Prepared on 10-mu m-Thick GaN Films Grown by Hydride Vapor Phase Epitaxy |
Authors: | Chen, Yu-An Chang, Chia-Wei Kuo, Cheng-Huang 照明與能源光電研究所 Institute of Lighting and Energy Photonics |
Keywords: | AlN;hydride vapor phase epitaxy (HVPE);light-emitting diode (LED);patterned sapphire substrate (PSS) |
Issue Date: | 1-Sep-2015 |
Abstract: | In this paper, we successfully introduced the sputtered AlN/patterned sapphire substrate template into hydride vapor phase epitaxy (HVPE) using a two-step growth method. This method simplified the procedure, realized uninterrupted growth, and improved the crystal quality of GaN films. The effects of light-emitting diodes (LEDs) grown on a 10-mu m-thick GaN film through HVPE were also compared with those of the LEDs grown on a 2.4-mu m-thick GaN film through metal organic chemical vapor deposition (MOCVD). Compared with the LEDs grown on the 2.4-mu m-thick GaN film through MOCVD, the LEDs grown on the 10-mu m-thick GaN film through HVPE had significantly enhanced light output power (3.24-4.79 mW) and extended saturation current (300-355 mA). These improvements of the LEDs were attributed to the better thermal conductivities and better crystal quality of the 10-mu m-thick GaN film through HVPE than those of the 2.4-mu m-thick GaN film through MOCVD. |
URI: | http://dx.doi.org/10.1109/TED.2015.2450503 http://hdl.handle.net/11536/128141 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2015.2450503 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 62 |
Begin Page: | 2913 |
End Page: | 2918 |
Appears in Collections: | Articles |