次7奈米鰭式元件世代新穎元件架構與通道材料之開發( I )

Full metadata record

DC Field	Value	Language
dc.contributor.author	簡昭欣	zh_TW
dc.contributor.author	Chien Chao-Hsin	en_US
dc.date.accessioned	2016-03-28T08:17:41Z	-
dc.date.available	2016-03-28T08:17:41Z	-
dc.date.issued	2015	en_US
dc.identifier.govdoc	MOST104-2119-M009-008	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/130322	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11481720&docId=463840	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	次7奈米鰭式元件世代新穎元件架構與通道材料之開發( I )	zh_TW
dc.title	Exploration of Novel Device Structure and New Channel Material for Sub-7nm Technology Node FinFET( I )	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans