| Title: | 低功耗互補式穿隧場效電晶體的設計與製作 (I) Design and Fabrication of Low Power Complementary Tunneling FETs (I) |
| Authors: | 莊紹勳 Chung Steve S 國立交通大學電子工程學系及電子研究所 |
| Issue Date: | 2016 |
| Gov't Doc #: | MOST104-2221-E009-059-MY2 |
| URI: | http://hdl.handle.net/11536/130964 https://www.grb.gov.tw/search/planDetail?id=11708195&docId=476105 |
| Appears in Collections: | Research Plans |
- 低功耗互補式穿隧場效電晶體的設計與製作 (I) /
- 低功耗互補式穿隧場效電晶體的設計與製作 (I) / 莊紹勳;Chung Steve S
- SixGe1-x Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement / Wang, Pei-Yu;Tsui, Bing-Yue
- High Performance Design of Tunneling FET for Low Voltage/Power Applications: Strategies and Solutions / Chung, Steve S.
- Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure / Wang, Pei-Yu;Tsui, Bing-Yue
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