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dc.contributor.authorKew, MDen_US
dc.contributor.authorChen, JSen_US
dc.contributor.authorChu, CYen_US
dc.date.accessioned2014-12-08T15:18:10Z-
dc.date.available2014-12-08T15:18:10Z-
dc.date.issued2005-11-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://dx.doi.org/10.1093/ietele/e88-c.11.2150en_US
dc.identifier.urihttp://hdl.handle.net/11536/13133-
dc.description.abstractA new sub-1-V CMOS bandgap voltage reference without using low-threshold-voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25-mu n CMOS process, where the occupied silicon area is only 177 pm x 106 pm. The experimental results have shown that, with the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV at room temperature, and the temperature coefficient is 58.1 ppm/degrees C from - 10 degrees C to 120 degrees C without laser trimming. Under the supply voltage of 0.85 V, the average power supply rejection ratio (PSRR) is -33.2dB at 10 kHz.en_US
dc.language.isoen_USen_US
dc.subjectvoltage referenceen_US
dc.subjectbandgap voltage referenceen_US
dc.subjecttemperature coefficienten_US
dc.subjectPSRR (power supply rejection ratio)en_US
dc.subjectstartup circuiten_US
dc.titleA CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1093/ietele/e88-c.11.2150en_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE88Cen_US
dc.citation.issue11en_US
dc.citation.spage2150en_US
dc.citation.epage2155en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000233546400018-
dc.citation.woscount0-
Appears in Collections:Articles