以離子植入技術改善鍺超淺接面與超低接觸阻抗( III )

Title:	以離子植入技術改善鍺超淺接面與超低接觸阻抗( III ) Improving Ge-Based Shallow Junctions and Low Resistance Contact by Ion Implantation Technology( III )
Authors:	崔秉鉞林炯源國立交通大學電子工程學系及電子研究所
Keywords:	;
Issue Date:	2016
Abstract:
Gov't Doc #:	MOST105-2622-E009-002-CC2
URI:	https://www.grb.gov.tw/search/planDetail?id=11947538&docId=495373 http://hdl.handle.net/11536/132044
Appears in Collections:	Research Plans