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dc.contributor.authorLin, Ja-Honen_US
dc.contributor.authorLiu, Wei-Reinen_US
dc.contributor.authorLin, Yi-Chinen_US
dc.contributor.authorSu, Hsing-Jungen_US
dc.contributor.authorChen, Hou-Renen_US
dc.contributor.authorTsai, Chih-Yaen_US
dc.contributor.authorChen, Yao-Huien_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2017-04-21T06:56:21Z-
dc.date.available2017-04-21T06:56:21Z-
dc.date.issued2016-09en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4964149en_US
dc.identifier.urihttp://hdl.handle.net/11536/132678-
dc.description.abstractPump polarization dependent carrier dynamics, particularly excitonic dynamics, of non-polar a-plane zinc oxide (ZnO) epifilms with two different thicknesses were investigated using time resolved measurements. Unlike the electron and hole dynamics through the above-bandgap excitation, transient differential reflectance (TDR) traces revealed similar trends under two orthogonal pump polarization conditions relative to the c-axis (E-pu +/- c and E-pu vertical bar vertical bar c) of a-ZnO around near-exciton-resonance excitation. By means of a band diagram, the bandgap renormalization (BGR) effect can be reasonably explained by the screening of the Coulomb potential energy due to the accumulation of relaxed free carriers that were initially excited through the absorption of two cascaded pump photons via the excitonic level, a process known as two photon absorption (TPA). Thus, the modulation depths of the TPA around zero time delay, due to simultaneous absorption of one pump and one probe photon via the excitonic level, increased linearly with the pump fluence, proportional to the modulation depth resulting from the BGR effects. (C) 2016 Author(s).en_US
dc.language.isoen_USen_US
dc.titleRoom temperature excitonic dynamics of non-polar a-plane ZnO epifilmsen_US
dc.identifier.doi10.1063/1.4964149en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume6en_US
dc.citation.issue9en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000385674300075en_US
Appears in Collections:Articles