Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact

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DC 欄位	值	語言
dc.contributor.author	Chen, Yi-Ju	en_US
dc.contributor.author	Chou, Hung-Ju	en_US
dc.contributor.author	Li, Ching-I	en_US
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.date.accessioned	2017-04-21T06:48:46Z	-
dc.date.available	2017-04-21T06:48:46Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-0726-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134678	-
dc.description.abstract	Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.	en_US
dc.language.iso	en_US	en_US
dc.title	Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.citation.spage	108	en_US
dc.citation.epage	109	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000391250500045	en_US
dc.citation.woscount	0	en_US
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