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dc.contributor.authorYang, Kai-Hsiangen_US
dc.contributor.authorKuo, Ming-Chingen_US
dc.contributor.authorYan, Tzu-Chaoen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2017-04-21T06:48:28Z-
dc.date.available2017-04-21T06:48:28Z-
dc.date.issued2011en_US
dc.identifier.isbn978-0-85825-974-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/135520-
dc.description.abstractIn this work, a balun low-noise amplifier (LNA) is designed and implemented in 0.18-mu m CMOS process. The bulk cross-coupling (BCC) and capacitance cross-coupling (CCC) techniques are introduced in this LNA, which not only increase gain and linearity but also decrease noise figure. The 3 dB bandwidth extends from 1.27 GHz to 5.31 GHz. The maximum differential gain is 10.13 dB. Measured at 3 GHz, P-1dB and IIP3 are -10 dBm and 0 dBm, respectively. The LNA core circuit dissipates 7.32 mW from 1.8 V power supply.en_US
dc.language.isoen_USen_US
dc.subjectBalunen_US
dc.subjectbulk cross-coupling (BCC)en_US
dc.subjectcapacitance cross-coupling (CCC)en_US
dc.titleA 1.3 GHz-5.3 GHz Wideband, High Linearity Balun Low Noise Amplifieren_US
dc.typeProceedings Paperen_US
dc.identifier.journalASIA-PACIFIC MICROWAVE CONFERENCE 2011en_US
dc.citation.spage506en_US
dc.citation.epage509en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000394376200129en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper