場效應電晶體負電阻理論之商榷

标题:	场效应电晶体负电阻理论之商榷 Comments on the Theory of Negative Resistance of FET Devices
作者:	庄晴光蔡中 Ching-Kuang Tzuan Chun Tsai
公开日期:	十二月-1976
摘要:	A theory of negative differential resistance proposed originally for JFET is extended and discussed for the results for MISFET devices to determine both peak point and valley point in the I-V curves.
URI:	http://hdl.handle.net/11536/137585
期刊:	交通大学学报 The Journal of National Chiao Tung University
Volume:	2
起始页:	263
结束页:	266
显示于类别：	The Journal of National Chiao Tung University

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APA	庄., 蔡., Ching-Kuang T., & Chun T. (1976). 场效应电晶体负电阻理论之商榷. The Journal of National Chiao Tung University.
Bibtex	@article{1976, title={场效应电晶体负电阻理论之商榷}, author={庄晴光 and 蔡中 and Ching-Kuang Tzuan and Chun Tsai}, journal={The Journal of National Chiao Tung University}, year={1976}, url={http://140.113.37.243/handle/11536/137585?locale=zh_CN&mode=simplelocale%3Dzh_TWlocale%3Dzh_CN}, }