Gal-xAlxAsl-yPy均一組成的液相成長

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DC Field	Value	Language
dc.contributor.author	李耀亭	zh_TW
dc.contributor.author	Y.T.Lee	en_US
dc.date.accessioned	2017-10-06T06:22:51Z	-
dc.date.available	2017-10-06T06:22:51Z	-
dc.date.issued	1978-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137603	-
dc.description.abstract	Aluminum and Phosphorus are distributed uniformly in Ga1-xAlxAs1-yPy epitaxial layer grown on GaAs substrate by Temperature Difference Method[4].	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Gal-xAlxAsl-yPy均一組成的液相成長	zh_TW
dc.title	An Uniformly Compositional Gal-xAlxAsl-yPy Layer Grown on GaAs by Liquid Phase Epitaxy	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交通大學學報	zh_TW
dc.identifier.journal	The Journal of National Chiao Tung University	en_US
dc.citation.volume	4	en_US
dc.citation.spage	27	en_US
dc.citation.epage	28	en_US
Appears in Collections:	The Journal of National Chiao Tung University

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