非晶態氧化銦鎵鋅應用於銅導電橋式記憶體之特性研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	張惟喬	zh_TW
dc.contributor.author	劉柏村	zh_TW
dc.contributor.author	戴亞翔	zh_TW
dc.contributor.author	Chang, Wei-Chiao	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.date.accessioned	2018-01-24T07:42:22Z	-
dc.date.available	2018-01-24T07:42:22Z	-
dc.date.issued	2017	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450542	en_US
dc.identifier.uri	http://hdl.handle.net/11536/142558	-
dc.language.iso	en_US	en_US
dc.subject	銅導電橋式記憶體	zh_TW
dc.subject	非晶態氧化銦鎵鋅	zh_TW
dc.subject	金屬氧化還原機制	zh_TW
dc.subject	像素內嵌式記憶體	zh_TW
dc.subject	CBRAM	en_US
dc.subject	ECM	en_US
dc.subject	IGZO	en_US
dc.subject	Memory-in-pixel	en_US
dc.title	非晶態氧化銦鎵鋅應用於銅導電橋式記憶體之特性研究	zh_TW
dc.title	Study on a-InGaZnO-Based Copper Conductive-Bridging Random Access Memory	en_US
dc.type	Thesis	en_US
dc.contributor.department	光電工程研究所	zh_TW
Appears in Collections:	Thesis