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dc.contributor.author張惟喬zh_TW
dc.contributor.author劉柏村zh_TW
dc.contributor.author戴亞翔zh_TW
dc.contributor.authorChang, Wei-Chiaoen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2018-01-24T07:42:22Z-
dc.date.available2018-01-24T07:42:22Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450542en_US
dc.identifier.urihttp://hdl.handle.net/11536/142558-
dc.language.isoen_USen_US
dc.subject銅導電橋式記憶體zh_TW
dc.subject非晶態氧化銦鎵鋅zh_TW
dc.subject金屬氧化還原機制zh_TW
dc.subject像素內嵌式記憶體zh_TW
dc.subjectCBRAMen_US
dc.subjectECMen_US
dc.subjectIGZOen_US
dc.subjectMemory-in-pixelen_US
dc.title非晶態氧化銦鎵鋅應用於銅導電橋式記憶體之特性研究zh_TW
dc.titleStudy on a-InGaZnO-Based Copper Conductive-Bridging Random Access Memoryen_US
dc.typeThesisen_US
dc.contributor.department光電工程研究所zh_TW
Appears in Collections:Thesis