Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 藍元志 | zh_TW |
dc.contributor.author | 吳耀銓 | zh_TW |
dc.contributor.author | Lian, Yuan-Chi | en_US |
dc.contributor.author | Wu, Yew-Chung | en_US |
dc.date.accessioned | 2018-01-24T07:42:38Z | - |
dc.date.available | 2018-01-24T07:42:38Z | - |
dc.date.issued | 2017 | en_US |
dc.identifier.uri | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070451516 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/142752 | - |
dc.language.iso | zh_TW | en_US |
dc.subject | 藍寶石基板 | zh_TW |
dc.subject | 溼蝕刻 | zh_TW |
dc.subject | 氮化鋁緩衝層 | zh_TW |
dc.subject | 發光二極體 | zh_TW |
dc.subject | 氮化鎵磊晶 | zh_TW |
dc.subject | sapphire | en_US |
dc.subject | wet-etched | en_US |
dc.subject | AlN buffer layer | en_US |
dc.subject | LED | en_US |
dc.subject | GaN epitaxy | en_US |
dc.title | 修飾溼蝕刻藍寶石圖形化基板對用氧化鋁當緩衝層之氮化鎵磊晶之影響 | zh_TW |
dc.title | Effect of Modifying Wet-etched Patterned Sapphire Substrate on GaN Epitaxial Behavior using AlN as buffer layer | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 材料科學與工程學系所 | zh_TW |
Appears in Collections: | Thesis |