| Title: | Impacts of NBTI on SRAM Array with Power Gating Structure |
| Authors: | Yang, Hao-I Chuang, Ching-Te Hwang, Wei 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 2009 |
| URI: | http://hdl.handle.net/11536/14322 |
| ISBN: | 978-1-4244-2784-0 |
| Journal: | PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS |
| Begin Page: | 76 |
| End Page: | 77 |
| Appears in Collections: | Conferences Paper |
- Impacts of NBTI and PBTI on Power-Gated SRAM with High-k Metal-Gate Devices / Yang, Hao-I;Chuang, Ching-Te;Hwang, Wei
- Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices / Yang, Hao-I;Hwang, Wei;Chuang, Ching-Te
- Impacts of Contact Resistance and NBTI/PBTI on SRAM with High-kappa Metal-Gate Devices / Yang, Hao-I;Chuang, Ching-Te;Hwang, Wei
- Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM / Yang, Hao-I.;Yang, Shyh-Chyi;Hwang, Wei;Chuang, Ching-Te
- 奈米隨機存取記憶體的長時間可靠度劣化現象分析與可容忍此劣化現象之設計 / 莊景德;Chuang Ching-Te
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