Impacts of NBTI on SRAM Array with Power Gating Structure

Full metadata record

DC Field	Value	Language
dc.contributor.author	Yang, Hao-I	en_US
dc.contributor.author	Chuang, Ching-Te	en_US
dc.contributor.author	Hwang, Wei	en_US
dc.date.accessioned	2014-12-08T15:20:11Z	-
dc.date.available	2014-12-08T15:20:11Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-2784-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/14322	-
dc.language.iso	en_US	en_US
dc.title	Impacts of NBTI on SRAM Array with Power Gating Structure	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS	en_US
dc.citation.spage	76	en_US
dc.citation.epage	77	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000272451000033	-
Appears in Collections:	Conferences Paper