标题: | The Influence of Device Morphology on Wafer-Level Bonding with Polymer-Coated Layer |
作者: | Liang, Hao-Wen Chen, Hsiu-Chi Lin, Chien-Hung Lee, Chia-Lin Yang, Shan-Chun Chen, Kuan-Neng 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Temporary bonding technology;3D integration;Device Morphology |
公开日期: | 1-一月-2016 |
摘要: | Thetolerance of device morphology in wafer-level bonding through polymer-coated layer was investigated for the application of 3D integration. Several different pillar heights were fabricated on wafers to simulate the case of bonding with real devices on wafers. Overall, the wafer morphology with polymer-coated layer above devices less than 2 mu m can achieve excellent bonding quality. Furthermore, undamaged carrier wafers can be obtained after laser-assisted de-bonding technology, and post clean treatment. Based on bonding results, this research can provide a practical concept on device morphology for polymer-based temporary wafer-level bonding in 3D integration. |
URI: | http://hdl.handle.net/11536/147208 |
ISSN: | 2164-0157 |
期刊: | 2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) |
显示于类别: | Conferences Paper |