A Tight Binding Method Study of Optimized Si-SiO2 System

doi:10.1109/TED.2010.2071150

Title:	A Tight Binding Method Study of Optimized Si-SiO2 System
Authors:	Watanabe, Hiroshi Kawabata, Kenji Ichikawa, Takashi 電子工程學系及電子研究所電子與資訊研究中心 Department of Electronics Engineering and Institute of Electronics Microelectronics and Information Systems Research Center
Keywords:	Band gap;density-of-states ( DOS);interfacial states;molecular dynamics;Si dot;SiO2;tight binding
Issue Date:	1-Nov-2010
Abstract:	A mixed method of molecular dynamics and tight binding is applied to a Si-cluster surrounded by SiO2 in order to study an influence of interfacial states on the band structure of the Si cluster. As a result, it is found that intrinsic interfacial states invade the band gaps of Si and SiO2 from the conduction band, which may suggest that the Si dot surrounded by SiO2 sounds metallic due to the interfacial states. This feature occurs while the size of the Si dot is less than at least 4 nm.
URI:	http://dx.doi.org/10.1109/TED.2010.2071150 http://hdl.handle.net/11536/150110
ISSN:	0018-9383
DOI:	10.1109/TED.2010.2071150
Journal:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	57
Begin Page:	3084
End Page:	3091
Appears in Collections:	Articles