First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack

Title:	First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
Authors:	Luc, Q. H. Fan-Chiang, C. C. Huynh, S. H. Huang, P. Do, H. B. Ha, M. T. H. Jin, Y. D. Nguyen, T. A. Zhang, K. Y. Wang, H. C. Lin, Y. K. Lin, Y. C. Hu, C. Iwai, H. Chang, E. Y. 交大名義發表 National Chiao Tung University
Issue Date:	1-Jan-2018
Abstract:	We demonstrate, for the first time, the negative capacitance (NC) In0.53Ga0.47As nMOSFET with 8-nm Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al2O3/InGaAs nMOSFETs with steep SS property (similar to 11 mV/dec).
URI:	http://hdl.handle.net/11536/152028
ISBN:	978-1-5386-4218-4
Journal:	2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY
Begin Page:	47
End Page:	48
Appears in Collections:	Conferences Paper