First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack

标题:	First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
作者:	Luc, Q. H. Fan-Chiang, C. C. Huynh, S. H. Huang, P. Do, H. B. Ha, M. T. H. Jin, Y. D. Nguyen, T. A. Zhang, K. Y. Wang, H. C. Lin, Y. K. Lin, Y. C. Hu, C. Iwai, H. Chang, E. Y. 交大名义发表 National Chiao Tung University
公开日期:	1-一月-2018
摘要:	We demonstrate, for the first time, the negative capacitance (NC) In0.53Ga0.47As nMOSFET with 8-nm Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al2O3/InGaAs nMOSFETs with steep SS property (similar to 11 mV/dec).
URI:	http://hdl.handle.net/11536/152028
ISBN:	978-1-5386-4218-4
期刊:	2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY
起始页:	47
结束页:	48
显示于类别：	Conferences Paper